Description
Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP19N20 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. Jan 8, 2016 FQP19N20 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Terminal Finish.
Part Number | FQP19N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 200V 19.4A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 19.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 9.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP19N20
FREESCL
2546
1.88
HK HEQING ELECTRONICS LIMITED
FQP19N20
FREECAL
10000
2.6825
Hong Kong Capital Industrial Co.,Ltd
FQP19N20
Freescale Semiconductor
9000
3.485
SUMMER TECH(HK) LIMITED
FQP19N20
FREECALE
200000
4.2875
Shenzhen WTX Capacitor Co., Ltd.
FQP19N20
FREESICAL
1433
5.09
WIN AND WIN ELECTRONICS LIMITED