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Description
Mar 16, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for
Part Number | FQP19N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 100V 19A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image | ![]() |
FQP19N10
FREESCL
18500
0.04
HK HEQING ELECTRONICS LIMITED
FQP19N10
FREECAL
9000
1.3
Good Time Electronic Group Limited
FQP19N10
Freescale Semiconductor
1000
2.56
E-Solution Technology Co.,Limited
FQP19N10 MOS()
FREECALE
2703
3.82
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP19N10
FREESICAL
160
5.08
Yingxinyuan INT'L (Group) Limited