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Description
Datasheet FDS6630A Rev. C1. FDS6630A . N-Channel Logic Level PowerTrenchTM MOSFET. General Description. This N-Channel Logic Level MOSFET is produced Jul 14, 2015 FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDS6630A . FDS6630A . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6630A . SOIC- 8 Feb 3, 2014 Fairchild Semiconductor FDS6630A . Digi-Key. FDS6630ACT-ND. 1. R1. RES 0 Ohm 1/10W 0603 SMD. Panasonic - ECG. ERJ-3GEY0R00V.
| Part Number | FDS6630A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 30V 6.5A 8SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 38 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
FDS6630A
FREESCL
33800
0.24
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDS6630A
FREECAL
7510
1.11
ONSTAR ELECTRONICS CO., LIMITED
FDS6630A
Freescale Semiconductor
9000
1.98
SUMMER TECH(HK) LIMITED
FDS6630A
FREECALE
6000
2.85
Riking Technology (HK) Co., Limited
FDS6630A
FREESICAL
10000
3.72
Shenzhen WTX Capacitor Co., Ltd.
