Description
div id=gcsContainer> Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (8-pin SO). Fairchild FDS6670A. R1, R2. 2. 0.007 1%, 1/2W resistors (2010). IRC LR2010-01- R0007-F Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6612A . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. 100 pF. 1. D1,D2. BAT54WT1. 2. L1. 4.6 H. 1. L2. 3.2 H. 1. Q2. FDS6984S. 1. Q3. FDS6612A . 1. Q10. FDS6680S. 1. R1,R3,R5,R13,R17. Open. 5. R2,R4,R15. L2. 1. 4 H, 6.2A power inductor. Sumida CDEP105(S)-4R0. N1, N3. 2 n-channel MOSFETs (SO8). Fairchild FDS6612A . N2, N4. 2 n-channel MOSFETs (SO8). DESCRIPTION. L1, L2. 2. 5.8 H, 8.6A, 16.2m inductors. Sumida CDRH127/LD- 5R8NC. N1, N3. 2. 8.4A, 30V n-channel MOSFETs, SO-8. Fairchild FDS6612A .
Part Number | FDS6612A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 30V 8.4A 8-SOIC |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 8.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
FDS6612A
FREESCL
16000
1.82
Finestock Electronics HK Limited
FDS6612A
FREECAL
16784
2.4675
HK HEQING ELECTRONICS LIMITED
FDS6612A
Freescale Semiconductor
5000
3.115
TIANHAO INDUSTRIAL CO., LIMITED
FDS6612A
FREECALE
273805
3.7625
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDS6612A
FREESICAL
2365
4.41
Nosin (HK) Electronics Co.