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Description
Sep 14, 2016 FQPF10N60C . FQPF10N60C . TO220F-3. Sep 14, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Page 1. DIGITAL DISPLAY SOLUTIONS www.fairchildsemi.com. Display Interface and Control. Signal Process and Control. Display Interface and Control. Page 1. Semiconductor Components Industries, LLC, 2016. July, 2016 Rev. 2. 1. Publication Order Number: MBR10L60CT/D. MBR10L60CTG,. Page 1. Fujitsu Microelectronics Europe. User Guide. FMEMCU-UG-960009-14. F MC-16LX/FX FAMILY. EVALUATION BOARD. FLASH-CAN-64P-350- Apr 6, 2011 Page 1. To learn more about ON Semiconductor, please visit our website at www. onsemi.com. Is Now Part of. ON Semiconductor and the
| Part Number | FQPF10N60C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 600V 9.5A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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