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Description
Datasheet Nov 1, 2013 *Drain current limited by maximum junction temperature. FQP10N20C / FQPF10N20C . N-Channel QFET. . MOSFET. 200 V, 9.5 A, 360 m . Mar 24, 2015 FQPF10N20C . FQPF10N20C . TO220F-3.csv. Mar 24, 2015. 1.0. FSSZ. 2.11234 g . Each. Manufacturing Process Information. Terminal Finish. Jul 14, 2015 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF10N20C . TO220F-3. FSSZ. FSSZ. 2.11234.
| Part Number | FQPF10N20C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 200V 9.5A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
FQPF10N20C**
FREESCL
49800
0.47
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF10N20C
FREECAL
9000
1.4025
SUMMER TECH(HK) LIMITED
FQPF10N20C
Freescale Semiconductor
3314
2.335
Yataitong Electronic Technology Co., Limited
FQPF10N20C
FREECALE
100
3.2675
Yingxinyuan INT'L (Group) Limited
FQPF10N20C
FREESICAL
11001
4.2
Ande Electronics Co., Limited
