![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Description
Datasheet Nov 1, 2013 G. S. D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDP090N10 . Unit. VDSS. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FDP090N10 . FDP090N10 . TO-220 -3 (92.5-5-2.5DA_AlBW). (G). INTERNAL SUZHOU. 2.030182. Aug 8, 2014 FDP090N10 . TO-220-3. (92.5-5-2.5DA_AlBW) (G). SUZHOU. INTERNAL. SUZHOU. 2.0301822. Not. Applicable. Terminal. Finish. Base Alloy. Jan 24, 2013 MOSFET. RLPC1. 330 k . 1/8 W. Q1. FCPF11N60. RLPC2. 13 k . 1/8 W. Q2. FDPF15N65. RRES1. 36 k . 1/8 W. Q3. FDP090N10 . RRES2. FdP090n10 . 100. 20. 9. 89. 22. tO-220. FdP100n10. 100. 20. 10. 76. 20. tO- 220. FdP120n10. 100. 20. 12. 66. 20. tO-220. FdP150n10. 100. 20. 15. 53. 15.
Part Number | FDP090N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 100V 75A TO-220 |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8225pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image | ![]() |
FDP090N10
FREESCL
32318
1.62
HK HEQING ELECTRONICS LIMITED
FDP090N10
FREECAL
2300
2.205
Kinghead Electronics Co.,Limited
FDP090N10
Freescale Semiconductor
20000
2.79
Redstar Electronic Limited
FDP090N10
FREECALE
100
3.375
Yingxinyuan INT'L (Group) Limited
FDP090N10
FREESICAL
458600
3.96
Shenzhen WTX Capacitor Co., Ltd.