(5/5) based on 19 customer reviews
Description
Jan 13, 2017 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDP083N15A_F102 . TO220-3 (92.5-5-2.5DA_AlBW) May 31, 2011 The FDP083N15A_F102 , FDB082N15A, and FDP036N10A n- channel PowerTrench MOSFETs provide 66% improved figure of merit, QG x FDP083N15A-F102 . Pb-free. Halide free. Active. N-. Cha nne l. 150. 20. 117. 8.3. 64. 5. 64. 5. TO-. 220. -3. For more information please contact your local sales FDP083N15A_F102 . Fairchild Semiconductor Q3. MOSFET 8A/600V TO-220. 1. FQP8N60C. Fairchild Semiconductor Q4. 4-Pin DIP Phototransistor Output. FDP083N15A_. F102. MOSFET, N-channel, 150 V, 105 A. Fairchild. FDP083N15A_F102 . 1. Q10. DNI. Transistor, GP, NPN, 200 mA, 40 V. Fairchild. MMBT3904.
| Part Number | FDP083N15A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 150V 83A TO220-3 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6040pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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