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Description

VCBO. Collector-base voltage (IE = 0). 150. V. VCEO. Collector-emitter voltage ( IB = 0). 60. V. VEBO. Emitter-base voltage (IC = 0). 7. V. IC. Collector current. 5. A. ICM. Collector peak current (tP < 5 ms). 10. A. IB. Base current. 1. A. IBM. Base peak current (tP < 5 ms). 2. A. Ptot. Total dissipation at Tamb = 25 C. 1.6. W. Tstg . Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the. Recommended Operating Conditions may affect device reliability. 1. 5 ms, v 10% Duty Apr 3, 2006 VCBO. Collector-base voltage (IE = 0). -45. V. VCEO. Collector-emitter voltage (IB = 0). -30. V. VEBO. Emitter-base voltage (IC = 0). -6. V. IC. Collector current. -5. A. ICM. Collector peak current (tP < 5ms). -10. A. Ptot. Total dissipation at Tc = 25 C. 15. W. Tstg. Storage temperature. -65 to 150. C. TJ. Jun 4, 2012 VCBO. Collector-base voltage (IE = 0). -100. V. VCEO. Collector-emitter voltage ( IB = 0). -100. V. VEBO. Emitter-base voltage (IC = 0). -5. V. IC. Collector current. - 3. A. ICM. Collector peak current. -5. A. IB. Base current. -1. A. PTOT. Total dissipation at Tc = 25 C. 15. W. TSTG. Storage temperature.