Description
Sep 26, 2006 RA60H4452M1 and RA60H4047M1 use MOS FET device. MOS FET devices have lower surge endurance compared with silicon bipolar Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 . Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1. Recommendation of the RA60H1317M. RA60H1317M1A. RA60H1317M1B*. RA60H3847M1. RA60H3847M1A*. RA60H4047M1 . RA60H4452M1. RA60H4452M1A*. RA80H1415M1. RA55H3847M. RA55H4047M. RA55H4452M. RA60H1317M. RA60H1317M1A. RA60H3847M1. RA60H4047M1 . RA60H4452M1. RA80H1415M1 . 17. 13.2.
Part Number | RA60H4047M1 |
Brand | Freescale |
Image |
RA60H4047M1
FREESCL
500
0.9
ZHW High-tech (HK) Co., Limited
RA60H4047M1
FREECAL
3713
1.76
GUANGDONG ZHONGSHENG TECH IND CO.,LTD
RA60H4047M1
Freescale Semiconductor
500
2.62
RX ELECTRONICS LIMITED
RA60H4047M1
FREECALE
3708
3.48
E-CORE COMPONENT CO., LIMITED
RA60H4047M1
FREESICAL
112334
4.34
Cicotex Electronics (HK) Limited