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The PD85035 -E is a common source N-channel, enhancement-mode lateral field -effect RF power transistor. It is designed for high gain, broadband commercial Jul 22, 2013 DocID025026 Rev 1. 1/4. STEVAL-TDR031V1. 45 W / 380-490 MHz RF power module based on the PD85035S -E for mobile radio applications. Jul 25, 2013 Based on the two devices datasheets ( PD85035S -E and PD85050S) we calculated that a. 36 dBm power level is required to achieve a 45 W or PowerFlat. Q3, Q4. ST. 2. PSO-10. PD85035S . PSO-10. R1. Vishay. 1. 220 Ohm. CRCW0402220RFKED. 0402. R2. Vishay. 1. 150 Ohm. CRCW0402150RFKED. The PD85035C is a common source. N-channel, enhancement-mode lateral Field-. Effect RF power transistor. It is designed for high gain, broadband