Freescale

Description

Document Number: MRF6V2150N . Rev. 4, 4/2010. Freescale Semiconductor. Technical Data. MRF6V2150NR1. MRF6V2150NBR1. 10--450 MHz, 150 W, 50 V . Drain Efficiency. 18%. 30%. 26%. 5 total parts, DVB-T (8k OFDM) signal. Devices. MRF6V2010N. MRF6V2150N . MRFE6VP61K25H. (x8). Totals. Typical Gain. 2). GaAs pHEMT, e.g. MRFG35010AN. 100(?) to >5000 MHz; 12 Vdc (and negative gate bias). 3). HF/ VHF ISM, e.g. MRF6V2150N . 10 to 500 MHz; 50 Vdc. 4). MRF6V2300N. 300W. 10 600 MHz. Single-Ended. Over-Molded Plastic. MRF6V2150N . 150W. 10 450 MHz. Single-Ended. Over-Molded Plastic. MRF6V3090N. Broadcast. MRF6V2150N (2). Freescale. BLF871. Base station. MRF6V2150N (2) . Freescale. BLF177. Broadcast. MRF6V2150NBR1(18a). Freescale. BLF882.