Freescale

Description

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be. MJE2955 -G (PNP). RoHS Device. General Purpose Transistor. Page 1. REV:A. Maximum Ratings (at TA=25 C unless otherwise noted). Symbol. Parameter. Electrically Similar to MJE2955 and MJE3055. High Current Gain Bandwidth Product. Epoxy Meets UL 94 V 0 @ 0.125 in. NJV Prefix for Automotive and Jan 1, 2013 MJE2955 . PNP Silicon. Plastic-Encapsulate. Transistor. Features. Capable of 2.0Watts of Power Dissipation. Collector-current 10A. This Power MOSFET is the latest development of. STMicroelectronics unique Single Feature. Size strip-based process. The resulting transistor shows