Part Number | FQE10N20CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 200V 4A TO-126 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 12.8W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-126 |
Package / Case | TO-225AA, TO-126-3 |
Image |
FQE10N20CTU
FREESCL
1000
1
MY Group (Asia) Limited
FQE10N20CTU
FREECAL
1220
2.5175
Cicotex Electronics (HK) Limited
FQE10N20LCTU
Freescale Semiconductor
1000
4.035
MY Group (Asia) Limited
FQE10N20CTU
FREECALE
21919
5.5525
Hongkong K.L.N Electronic Technology Co., Ltd.
FQE10N20CTU
FREESICAL
1000
7.07
MY Group (Asia) Limited