(4/5) based on 6 customer reviews
Description
energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec- tronic lamp ballasts. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQB10N50CFTM -WS. Unit. VDSS. Drain to Source Voltage. 500. FQB10N50CFTM : N-Channel QFET FRFET MOSFET. For complete documentation, see the data sheet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and. DMOS technology. This advanced MOSFET technology has been especially tailored to
| Part Number | FQB10N50CFTM |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 500V 10A DPAK |
| Series | FRFET, QFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Rds On (Max) @ Id, Vgs | 610 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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