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Description
C/W. R JC. Thermal Resistance , Junction to Case (Note 1). 25. C/W. Device Marking. Device. Reel Size. Tape Width. Quantity. FDS6675BZ . FDS6675BZ . 13. Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6675BZ . SOIC-8 (CuBW-Gs). SUBCON. SUBCON. Jul 14, 2015 Unit Type. FDS6675BZ . FDS6675BZ . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751 g. Each. Manufacturing Process Information.
| Part Number | FDS6675BZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET P-CH 30V 8-SOIC |
| Series | PowerTrench |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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