Description
FDS3590 : 80V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been designed specifically Jan 13, 2017 FDS3590 . SOIC-8 (CuBW-Gs). GEM. GEM. 0.090751. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Alt. Coilcraft. Alt. MSS1278-223ML. 1. Q1. SI4480DY. MOSFET, N-ch, 80V, 6A, 35 m . SO8. SI4480DY-T1-E3. Vishay. Alt. FDS3590 . Alt. FDS3590 . Alt. Fairchild. 33uH. Inductor. 0.484 x 0.484 inch MSD1278-333. Coiltronics. 1. Q3. FDS3590 . MOSFET, N-ch, 80-V, 6-A, 44-milliOhms. SO8. FDS3590 . Fairchild. 1. R1. 249k. LPS4012-102NLC Coilcraft. 1. Q1. FDS3590 . MOSFET, N-ch, 80V, 6.5A, 35nC, 40mOhm. SO8. FDS3590 . Fairchild. 1. R1. 1. Resistor, Chip, 1/4W, 1%. 1210. Std .
Part Number | FDS3590 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 80V 6.5A 8SOIC |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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