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Description
Datasheet Jul 8, 2013 Pin 1. SO-8. FDS2572 . 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET. . Trench MOSFET. General Description. UltraFET. devices combine Jul 14, 2015 FDS2572 . SOIC-8 (CuBW). Jul 14, 2015. 1.0. SUBCON. 0.087918 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS2572 . SOIC-8 2006 3 17 IRF7492PBF / FDS2572 . R1. 1. 0603. Res., 1M 5%. Rohm. MCR03EZPJ1.0M. R2 . 1. 0805. Res., 68 OHM 5%. Rohm. MCR10EZHJ68. R3. 1. MMSZ5268BT1G. 82V. MMSZ5268BT1G. 82V. 2. 1. 10uF. 100V. 10uF. 100V. FDS2572 . 1. 2. 3. 5. 8. 6. 4. 7. 2.2uF. 150UH. 7447709151. 150UH. 7447709151.
| Part Number | FDS2572 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 150V 4.9A 8-SOIC |
| Series | UltraFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 4.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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