Description
DATASHEET Oct 1, 2013 FDP3651U . Features. Applications. MOSFET Maximum Ratings TC = 25 C unless otherwise noted. N-Channel PowerTrench. . MOSFET. Jul 12, 2016 FDP3651U . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDP3651U . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ.
Part Number | FDP3651U |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 100V 80A TO-220AB |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5522pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FDP3651U
FREESCL
5100
0.27
HK HEQING ELECTRONICS LIMITED
FDP3651U
FREECAL
3000
1.1175
Shenzhen Qiangneng Electronics Co., Ltd.
FDP3651U
Freescale Semiconductor
200000
1.965
Shenzhen WTX Capacitor Co., Ltd.
FDP3651U
FREECALE
5500
2.8125
AAC Technology Co., Limited
FDP3651U
FREESICAL
2710
3.66
Nosin (HK) Electronics Co.