Description
2009 Fairchild Semiconductor Corporation. FDN361BN Rev A1(W) www. fairchildsemi.com. FDN361BN . 30V N-Channel, Logic Level, PowerTrench. MOSFET. Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDN361BN . FDN361BN . SSOT-3. (EutecticAuBW-G). FDN361BN . SSOT-3 (EutecticAuBW-G). FSCP. FSCP. 0.01057. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . PMV65XP. FDN339AN. PMV30UN. FDN340P. PMV65XP. FDN342P. PMV65XP. FDN357N. PMV60EN. FDN359BN. PMV45EN. FDN361BN . BSH108. FDT3612. Fdn361Bn n. 30 single. 0.11. 0.16. . . . 1.3. 1.4. 0.5. ssOt-3. Fdn359Bn n. 30 single. 0.046. 0.06. . . . 5. 2.7. 0.5. ssOt-3. Fdn357n n. 30 single. 0.06. 0.09. .
Part Number | FDN361BN |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 30V 1.4A SSOT3 |
Series | PowerTrench |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 193pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
FDN361BN
FREESCL
30000
1.45
Rs (Int'l) Electronics Limited
FDN361BN
FREECAL
35800
2.06
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDN361BN
Freescale Semiconductor
389600
2.67
Shenzhen WTX Capacitor Co., Ltd.
FDN361BN
FREECALE
9000
3.28
SUMMER TECH(HK) LIMITED
FDN361BN_NL
FREESICAL
41100
3.89
CIS Ltd (CHECK IC SOLUTION LIMITED)