(4/5) based on 12 customer reviews
Description
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area. 43. oC/ W. Device Marking. Device. Package. Reel Size. Tape Width. Quantity. FDB8896 . N-Channel PowerTrench. MOSFET. . July 2010. Qualified to AEC Q101. RoHS Compliant. S. FDB8896 . FDB8896_F085. TO-263AB. 330mm. 24mm. Mar 24, 2015 Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDB8896 . Aug 8, 2014 FDB8896 . TO-263-3. (NiLFAlBW). SUZHOU. INTERNAL. SUZHOU. 1.4858980. 1 . Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. 2008 Fairchild Semiconductor Corporation. N. FDP8896 Rev. A2. FDP889. 6. FDP8896. N-Channel PowerTrench. . MOSFET. 30V, 92A, 5.9m . General
| Part Number | FDB8896 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 30V 93A TO-263AB |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
FDB8896
FREESCL
4150
1.42
HK HEQING ELECTRONICS LIMITED
FDB8896
FREECAL
180
2.2925
SUNTOP SEMICONDUCTOR CO., LIMITED
FDB8896
Freescale Semiconductor
8500
3.165
SUMMER TECH(HK) LIMITED
FDB8896
FREECALE
200
4.0375
Xinnlinx Electronics Pte Ltd
FDB8896
FREESICAL
1800
4.91
N&S Electronic Co., Limited
