(5/5) based on 15 customer reviews
Description
Nov 1, 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET. . II Easy-Drive MOSFET. 2012 Fairchild Semiconductor Corporation. FCP380N60E Jan 23, 2015 FCPF380N60E . TO220F-3 (DAP_CuAlBW)(G).csv. FSSZ. FSSZ. 2.108682. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FCPF380N60E . FCPF380N60E . TO-220F-3. (DAP_CuAlBW)(G). INTERNAL SUZHOU. 2.108682. Jul 1, 2013 Eco Status. Packaging Type. Quantity. FCPF380N60E . FCPF380N60E_F152. TO -220F. Green. Tube. 50. Symbol. Parameter. Test Conditions. Sep 25, 2013 34. 10.2. 6. TO220. FCPF380N60E . 600. 380. 34. 10.2. 6. TO220F. Note: 1. Part suffix: E = SuperFET II Easy Drive, Z = internal ESD diode.
| Part Number | FCPF380N60E |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 600V TO-220-3 |
| Series | SuperFET II |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
FCPF380N60E
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0.17
HK HEQING ELECTRONICS LIMITED
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Ysx Tech Co., Limited
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Freescale Semiconductor
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Shenzhen Qiangneng Electronics Co., Ltd.
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Z.H.T TECHNOLOGY HK LIMITED
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Shenzhen WTX Capacitor Co., Ltd.
