Description
Datasheet Sep 23, 2003 www.irf.com. Class D Audio Amplifier Design. Class D Amplifier Introduction. Gate Driver. MOSFET. Package. Design Example. Theory of Apr 27, 2010 FCP20N60 . R18. 38.3k . 1/8W. Q4. FCP20N60 . R19. 10k . 1/8W. Transformer. R20. 1k . 1/8W. TX1. 66:6. Primary 20mH. Capacitor. TX2. 1:1. UNISONIC TECHNOLOGIES CO., LTD. 20N60. Power MOSFET www.unisonic. com.tw. 1 of 3. Copyright 2015 Unisonic Technologies Co., Ltd. QW-R502-587. Fairchild FCP20N60 power MOSFET datasheet in. Fig. 4. The curve was produced using a test circuit that drives the gate of the DUT (Device Under Test). Sep 25, 2013 output capacitance than SuperFET I MOSFET FCP20N60 . (for a typical switching power supply bulk capacitor voltage), as shown in Figure 13
Part Number | FCP20N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 600V 20A TO-220 |
Series | SuperFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FCP20N60
FREESCL
10000
0.57
Hong Kong Capital Industrial Co.,Ltd
FCP20N60
FREECAL
9000
1.135
SUMMER TECH(HK) LIMITED
FCP20N60
Freescale Semiconductor
405
1.7
Yingxinyuan INT'L (Group) Limited
FCP20N60
FREECALE
24000
2.265
Cicotex Electronics (HK) Limited
FCP20N60
FREESICAL
11010
2.83
Ande Electronics Co., Limited