Freescale

Description

TO-220. 16. mW/ . TO-220F. 5.6. TO-3P. 640. Junction Temperature. TJ. +150. . Storage Temperature. TSTG. -40 ~ +150. . Note: 1. Pulse Test: Pulse Width DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be. VCEV. Collector-emitter voltage (VBE = -1.5 V). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 12. V. IC. Collector THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. Unit. Thermal Resistance, Junction-to-Case. R JC. 0.625. C/W. Thermal Resistance, Junction- to-