Freescale

Description

Designed for Digital Predistortion Error Correction Systems. Universal Broadband Driven Device with Internal RF Feedback. Document Number: AFT27S010N . Rev. 3, 12/2015. Freescale Semiconductor. Technical Data. 728 3600 MHz, 1.26 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR. AFT27S010NT1. 2600 MHz. Gain: 21.0 dB, Drain Efficiency: 22.7%. 2350 MHz. Gain: 21.6 dB, Drain Efficiency: 22.6%. 2140 MHz. Gain: 21.8 dB, Drain Efficiency: 23.0%. 748 MHz. Gain: 24.3 dB, Drain Efficiency: 24.7%. AFT27S010N . 10 W Rated Power. Designed as a driver for 20 to 40 W cellular base station MIMO applications. AFT27S010N . Rev. 2. 2100MHz. *C1 and C5 are mounted vertically. NOTE: All data measured in fixture with device soldered to heatsink. AFT27S012N uses the AFT27S0101N production fixture; board and parts list are identical. Q1. D53402. VDD. VGG. VDD. Table 7. AFT27S010NT1 Test Circuit Component Designations Driver. Final. Band F+A. Outdoor/Medium power 8*15W/20W. AFT27S006N. AFT27S010N . MRF8P20140WHS. AFT20P140-4WS. Band F+A. Indoor/High power 2*40W. AFT20S015N/2*AFT27S006N. 2*MRF8P20140WHS. 2* AFT20P140-4WS. 2.3/2.6GHz TD-LTE Solutions. TDSCDMA F+A Solutions recommendation AFT27S010N . 18, 22. 7.9. 728. 3600. A2T27S007N. 18. 6. 728. 3600. AFT27S006N. 18, 22. 4. 1. 2000. MW6S004N. 18, 19. Go to Low Power Pre- drivers. Lower 960. 1090. 1215. 1400. 1800. Higher. Bold = In NXP Product Longevity program. * Output Power measured at P3dB. GaN. 28 32 V LDMOS. 7.2 12.5 V LDMOS.