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DATASHEET < Silicon RF Power MOS FET (Discrete) >. RD07MVS1B . RoHS Compliant, Silicon MOSFET Power Transistor,175MHz,520MHz,7W. Publication Date : Sep 2014. SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740 -870MHz. RD07MVS1B @f=740-870MHz : Vdd=7.2V, Idq=0.75A (Vgg=3.5V). Dec 5, 2003 t=0.8 ,material:FR4. The plating thickness of through hole=0.05. Mitsubishi heat sink size=40.0*90.0*10.0 UNIT:mm. RD07MVS1 . Pch vs Ta. Sep 16, 2003 RD07MVS1 . RD30HVF1. RD30HUF1. - Conditions. Human model(100pF,1.5 KOHM). - Test result. Conditions. /100pF,1.5KOHM. /1second *3. Dec 4, 2008 previous model, the RD07MVS1 . In addition, the 50-percent drain efficiency guaranteed in Mitsubishi Electrics previous model did not cover.