(4/5) based on 13 customer reviews
Description
IRF840A , SiHF840A. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; c. ISD 8.0 A, dI/dt 100 A/ s, VDD VDS, TJ 150 C. d. 1.6 mm from case . e. Uses IRF840A , SiH840A data and test conditions. PRODUCT SUMMARY. Jul 23, 2014 100khz. 21v or 9.5 amps. HEAT SINK REQUIRED. HEAT SINK REQUIRED. HEAT SINK REQUIRED. HEAT SINK REQUIRED. 1. 3. 2. IRF840A . 12). c. ISD 8.0 A, dI/dt 100 A/ s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRF840A , SiH840A data and test conditions. PRODUCT SUMMARY. Oct 28, 2014 Texas Instruments and/or its licensors do not warrant the accuracy or completeness of this specification or any information contained therein.
| Part Number | IRF840A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 500V 8A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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