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Part Number | IRF640NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 200V 18A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image | ![]() |
Hot Offer
IRF640NPBF
FREESCL
234222
0.22
HK FEILIDI ELECTRONIC CO., LIMITED
IRF640NPBF
FREECAL
6000
1.3625
HONGKONG SINIKO ELECTRONIC LIMITED
IRF640NPBF
Freescale Semiconductor
175000
2.505
HONGKONG SINIKO ELECTRONIC LIMITED
IRF640NPBF
FREECALE
8000
3.6475
HK HEQING ELECTRONICS LIMITED
IRF640NPBF
FREESICAL
8000
4.79
HK HEQING ELECTRONICS LIMITED