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Description
Package. TO-220AB. Lead (Pb)-free. IRF630PbF. SiHF630-E3. SnPb. IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) . IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel, The HEXFET Power MOSFET used in all the examples is the IRF630 . The control settings given in the examples are those suitable for the IRF630 . The user must IRF630 N-Channel Power MOSFET. GENERAL DESCRIPTION. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate An IRF630 operated at 10 Mhz with a gate voltage of 12 V would have gate drive losses of 3.6 W, independent from the value of the gate drive resistor. Clearly
| Part Number | IRF630B |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 200V 9A TO-220 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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