Freescale

Description

IRF530N . HEXFET Power MOSFET. 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 2.15. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. IRF530 . SiHF530. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Oct 3, 2004 Uses IRF530N data and test conditions. ssWhen mounted on 1! square PCB ( FRr4 or Gr10 Material). For recommended footprint and Jun 16, 2004 ISD 9.0A, di/dt 520A/ s, VDD V(BR)DSS,. TJ 175 C. Uses IRF530N data and test conditions. Pulse width 300 s; duty cycle VDS (50 V/div, 50 ns/div). VGS (5 A/div, 50 ns/div). Figure 40. Drain-Source Voltage vs. Gate-Source Voltage, at Turn-on, TPS2811. Driving an IRF530 (Hex- 3