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Description
Datasheet The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. Jan 8, 2016 FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. HGTP3N60A4 . HGTP3N60A4 . TO220-3 (92.5-5-. 2.5DA_AlBW). Jan 08, 2016. 1.0. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. HGTP3N60A4 . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ.
| Part Number | HGTP3N60A4 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Freescale |
| Description | IGBT 600V 17A 70W TO220AB |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 17A |
| Current - Collector Pulsed (Icm) | 40A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 3A |
| Power - Max | 70W |
| Switching Energy | 37µJ (on), 25µJ (off) |
| Input Type | Standard |
| Gate Charge | 21nC |
| Td (on/off) @ 25°C | 6ns/73ns |
| Test Condition | 390V, 3A, 50 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
HGTP3N60A4
FREESCL
4500
1.75
Bonase Electronics (HK) Co., Limited
HGTP3N60A4
FREECAL
8500
2.6475
SUMMER TECH(HK) LIMITED
HGTP3N60A4
Freescale Semiconductor
22
3.545
WIN AND WIN ELECTRONICS LIMITED
HGTP3N60A4
FREECALE
2365
4.4425
Xinye International Technology Limited
HGTP3N60A4
FREESICAL
44429
5.34
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
