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Mar 1, 2014 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the ABSTRACT. The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed Its the lowest frequency compatible with the applications requirements for performance and cost. Operation at higher frequencies: - increases component losses. 1.1 Structure. The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only description. The A723 is a precision integrated-circuit voltage regulator, featuring high ripple rejection, excellent input and load regulation, excellent