(4/5) based on 18 customer reviews
Description
DATASHEET Nov 1, 2013 175 C Maximum Junction Temperature Rating. Thermal Characteristics. Symbol. Parameter. FQPF30N06L . Unit. VDSS. Drain-Source Voltage. FQPF30N06L Rev. C1 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Jan 8, 2016 FQPF30N06L . FQPF30N06L . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF30N06L . TO220F-3. FSSZ. FSSZ. 2.11234.
| Part Number | FQPF30N06L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 60V 22.5A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 22.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 11.3A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
FQPF30N06L
FREESCL
33000
0.11
HK HEQING ELECTRONICS LIMITED
FQPF30N06L
FREECAL
1054
0.9775
Cicotex Electronics (HK) Limited
FQPF30N06L
Freescale Semiconductor
9999
1.845
Galaxy Global Solutions Limited
FQPF30N06L
FREECALE
2583
2.7125
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF30N06L
FREESICAL
33151
3.58
ATLANTIC TECHNOLOGY LIMITED
