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Description
. . HFF12N60 . FQPF12N60C . N-Channel Enhancement Mode Field Effect Transistor Sep 14, 2016 FQPF12N60C . FQPF12N60C . TO220F-3. Sep 14, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. FQPF12N60C : N-Channel QFET MOSFET 600V, 12A, 650m . For complete documentation, see the data sheet. These N-Channel enhancement mode power Jan 13, 2017 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF12N60C . TO220F-3. FSSZ. FSSZ. 2.11234. FQPF12N60C . N. Single. 600. 0.65. 48. 12. 51. TO-220F. FQP10N60C. N. Single. 600. 0.73. 44. 9.5. 156. TO-220. FQPF10N60C. N. Single. 600. 0.73. 44. 9.5.
| Part Number | FQPF12N60C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 600V 12A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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