(5/5) based on 4 customer reviews
Description
DATASHEET FQP85N06 Rev. C1 www.fairchildsemi.com. 1. FQP85N06 . N-Channel QFET. . MOSFET. 60 V, 85 A, 10 m . Description. This N-Channel enhancement mode Jun 11, 2007 MOSFET are attached. * TBR: To be included for prototype. R11 10k. 2. 1. Q2. FQP85N06 . Q2. FQP85N06 . RSHUNT1. 0.005. RSHUNT1. 0.005. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP85N06 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. Note: NTC Thermister RT1 to be placed. Close to the Heatsink to which. MOSFET are attached. R11 10k. 2. 1. Q2. FQP85N06 . Q2. FQP85N06 . RSHUNT1. 0.005.
| Part Number | FQP85N06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 60V 85A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4120pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 42.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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