(5/5) based on 14 customer reviews
Description
Datasheet Nov 1, 2013 FDS8958B . Dual N & P-Channel PowerTrench. . MOSFET. Q1-N-Channel: 30 V , 6.4 A, 26 m Q2-P-Channel: -30 V, -4.5 A, 51 m . Features. Jan 8, 2016 FDS8958B . SOIC-8 (CuBW-Gs). Jan 08, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS8958B . SOIC-8 (CuBW-Gs). GEM. GEM. 0.090751. 8. HHIHH5 H. 6.001020. L. 1.75}? 3.90J_ro.10 5-60. /O ! /. Emma LAND PATTERN RECOMMENDATION. [SEE DETAIL A l J L:O. 4210. 09 EEK 10FH, 1.75A, 120mI DCR inductor. TOKO DE4518 Series. 1124BS-100M. Q1. 1. 30V dual n-/p-MOSFET (8 SO). Fairchild FDS8958B . R1, R3. 2. 10I, 1/16W Q1%
| Part Number | FDS8958B |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Freescale |
| Description | MOSFET N/P-CH 30V 8SOIC |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A, 4.5A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 6.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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