Description
DATASHEET MOSFET Maximum Ratings TC = 25oC unless otherwise noted*. Thermal Characteristics. Symbol. Parameter. FDP8N50NZ FDPF8N50NZ . Unit. VDSS. Drain to Jul 12, 2016 FDPF8N50NZ . TO220F-3. (DAP_CuAlBW)(G). Jul 12, 2016. 1.0. FSSZ. 2.108682 g. Each. Manufacturing Process Information. Terminal Finish. Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDPF8N50NZ . TO220F-3 (DAP_CuAlBW)(G). FSSZ. capacitance characteristics of a conventional planar. MOSFET, FQPF9N50C, and the UniFET II MOSFET,. FDPF8N50NZ , respectively. Under the same RDS(on),. Semiconductor. Fairchild Semiconductor. IPA50R950CE. CS8N50F A9R. SVF840F. MDF7N50BTH. FDPF8N50NZ . IPA50R800CE. STF8NM50N. AOTF8T50P.
Part Number | FDPF8N50NZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 500V 8A TO220F |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 735pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 40.3W (Tc) |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FDPF8N50NZ
FREESCL
559
0.6
C&Z Electronic Hongkong Co., Limited
FDPF8N50NZ
FREECAL
16000
1.7625
Finestock Electronics HK Limited
FDPF8N50NZ
Freescale Semiconductor
155
2.925
WIN AND WIN ELECTRONICS LIMITED
FDPF8N50NZ (S)
FREECALE
12000
4.0875
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDPF8N50NZ
FREESICAL
200000
5.25
Shenzhen WTX Capacitor Co., Ltd.