![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Description
Datasheet Nov 1, 2013 November 2013. FDP023N08B N-Channel PowerTren c h. . MO. SFE. T. 2013 Fairchild Semiconductor Corporation. FDP023N08B Rev. Mar 12, 2013 FDMS030N06B. 60 V. 3.0 m . 75 nC. 100 A. 85 nC. Power56. FDP023N08B . 75 V. 2.350 m . 150 nC. 242 A. 114 nC. TO-220. FDP027N08B. application using the FDP023N08 . It has about 30% lower turn-off energy when compared to the best. MOSFET available on the market, as shown in Fig. 6.
Part Number | FDP023N08B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Freescale |
Description | MOSFET N-CH 75V 120A TO-220-3 |
Series | PowerTrench |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13765pF @ 37.5V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 245W (Tc) |
Rds On (Max) @ Id, Vgs | 2.35 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image | ![]() |
FDP023N08B
FREESCL
10000
0.49
HK HEQING ELECTRONICS LIMITED
FDP023N08B
FREECAL
3000
1.3125
Shenzhen Qiangneng Electronics Co., Ltd.
FDP023N08B
Freescale Semiconductor
9100
2.135
WIN AND WIN ELECTRONICS LIMITED
FDP023N08B
FREECALE
41657
2.9575
N&S Electronic Co., Limited
FDP023N08B
FREESICAL
11100
3.78
N&S Electronic Co., Limited