(4/5) based on 6 customer reviews
Description
Product Overview. FDMS86310 : 80V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been Dec 29, 2016 FDMS86310 . PQFN-8 5X6. (Cu_AlNiBW). Dec 29, 2016. 1.0. FSCP. 0.097269 g. Each. Manufacturing Process Information. Terminal Finish. FDMS86310 . PQFN-8 5X6 (Cu_AlNiBW). FSCP. FSCP. 0.097269. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp . FDMS86310 . 80. 17. 4.8. 6.7. -. -. 55. 24. 14. 693. -. Power 56. FDMS86320. 80. 10.5. 11.7. 15. -. -. 24. 10. 6.9. 353. FDMS3572. Power 56. FDMC86320. 80. 10.7. FDMS86310 . Single. N. 80. 20. 4.8. 6.7. . . 66. 24. 14. 1.3. SO-8FL. FDMS86320. Single. N. 80. 20. 11.7. 15. . . 29. 10. 6.9. 0.5. SO-8FL. FDMC86340.
| Part Number | FDMS86310 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 80V 17A 8-PQFN |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6290pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 17A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6), Power56 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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