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Description
28.00. 8000. TO-3PN. FDA28N50F. 500. 0.175. 80.0. 28.00. 1380. TO-3PN. FDH44N50. 500. 0.120. 90.0. 44.00. 14000. TO-247. FDH45N50F . 500. 0.120. 105.0. Nov 23, 2005 Reverse Recovery Waveforms. Test Conditions: Vr = 20V, If = 10A, di/dt = 160A/ usec & TJ = 25 C. FDH45N50F . FQA28N50F. IRF32N50K. Nov 5, 2009 FDH45N50F . 500. 0.120. 105. 45.00. 640. TO-247. FQPF8N60CF. 600. 1.500. 28 . 6.26. 242. TO-220F. FQP10N60CF. 600. 0.800. 44. 9.00. 300.
| Part Number | FDH45N50F |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 500V 45A TO-247 |
| Series | UniFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 137nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6630pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 22.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
FDH45N50F
FREESCL
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1.03
MeiChuangXinKe (SZ) Electronics Co., Ltd.
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Shenzhen Qiangneng Electronics Co., Ltd.
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3.08
Ysx Tech Co., Limited
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WIN AND WIN ELECTRONICS LIMITED
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45
5.13
Yingxinyuan INT'L (Group) Limited
