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Description
DATASHEET Jan 8, 2016 FDD8874 . TO252-3. (NiLFAlBW). Jan 08, 2016. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDD8874 . TO252- 3 Dec 19, 2012 DEMO CIRCUIT1997A. E28. R57. 0.005. 2010. R57. 0.005. 2010. J7. 1. 2345. Q4 . OPT. Q4. OPT. 2. 4. 5. 3. 1. Q12. FDD8874 . Q12. FDD8874 . FAIRCHILD FDD8874 . 10. 0. Q3-Q10. MOSFET LFPAK. OPT. 11. 0. R1, R3, R8, R9, R10, R15, R16, R18,. R20, R22, R26, R28, R33, R34, R36,. R37, R39, R43
| Part Number | FDD8874 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 30V 116A D-PAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 116A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2990pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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