(4/5) based on 18 customer reviews
Description
FDD6530A . 20V N-Channel PowerTrench. . MOSFET. General Description. This N-Channel MOSFET has been designed specifically to improve the overall Jan 13, 2017 FDD6530A . TO252-3 (NiLFAlBW). FSSZ. FSSZ. 0.29183. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Product Overview. FDD6530A : 20V N-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This N-Channel MOSFET has been Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDD6530A . FDD6530A . S-8368A21I NR4018T2R2M MCH3406. D1FH3. FDD6530A . 10 F. 2. 10 F. 4. 220 k 30 k 12 pF. 0.1 . 2. 5 V. S-8368A21I NR4018T2R2M MCH3406.
| Part Number | FDD6530A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Freescale |
| Description | MOSFET N-CH 20V 21A D-PAK |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 33W (Tc) |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 8A, 4.5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
FDD6530A
FREESCL
54707
0.19
HK HEQING ELECTRONICS LIMITED
FDD6530A
FREECAL
35800
1.3775
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDD6530A
Freescale Semiconductor
9000
2.565
SUMMER TECH(HK) LIMITED
FDD6530A
FREECALE
23537
3.7525
Yingxinyuan INT'L (Group) Limited
FDD6530A
FREESICAL
200000
4.94
Shenzhen WTX Capacitor Co., Ltd.
