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Description

These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and MJ E1 3004,MJ E13005 N PN. COLLECTOR SATURATTON REGION. DC CURRENT GAIN o o. 1. 0.5. 0.3. 0.2 lc , COLLECTOR CURRENT (AMP). 0.1. May 15, 2012 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 9. V. IC. May 9, 2014 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0; IB = 1.5 The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an